When forming Sophisticated transistors, for instance com prising high-k metal gate electrode stru... more When forming Sophisticated transistors, for instance com prising high-k metal gate electrode structures, a significant material loss of an embedded strain-inducing semiconductor material may be compensated for, or at least significantly reduced, by performing a second epitaxial growth step after the incorporation of the drain and Source extension dopant species. In this manner, Superior strain conditions may be achieved, while also the required drain and source dopant profile may be implemented.
When forming Sophisticated transistors, for instance com prising high-k metal gate electrode stru... more When forming Sophisticated transistors, for instance com prising high-k metal gate electrode structures, a significant material loss of an embedded strain-inducing semiconductor material may be compensated for, or at least significantly reduced, by performing a second epitaxial growth step after the incorporation of the drain and Source extension dopant species. In this manner, Superior strain conditions may be achieved, while also the required drain and source dopant profile may be implemented.
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