Journal of The Electrochemical Society, Nov 1, 1993
An investigation of the Ge composition profile, layer thickness, and crystalline quality of Si/Si... more An investigation of the Ge composition profile, layer thickness, and crystalline quality of Si/Si 1-x Ge x /Si heterojunction bipolar transistor-type structures was conducted using high resolution x-ray diffraction. Diffraction scans from (004) and (113) diffraction planes were analyzed. These experimental measurements were matched to scans that were simulated using a dynamical diffraction model to determine the Ge profile and layer thickness. Structural parameters were determined to 2 to 3 nm in layer thickness and ±0.003 in Ge mole fraction with the aid of the simulations and curve fitting. The Ge profile determined from these measurements compared very favorably to the profile determined by secondary ion mass spectroscopy measurements
The strain and crystalline perfection of GaAs implanted with either carbon, gallium, or both carb... more The strain and crystalline perfection of GaAs implanted with either carbon, gallium, or both carbon and gallium ions (5×1014 cm−2) were investigated using high-resolution triple axis diffractometry. We determined that a significant amount of carbon occupied substitutional sites after rapid thermal annealing only when gallium was co-implanted. The carbon in the carbon-implanted layer remained in nonsubstitutional sites after annealing. In both cases, most of the lattice strain in the implanted layer decreases upon annealing, but a defective crystalline structure with an extensive mosaic spread evolves. Conventional double-axis x-ray measurements were employed for comparison.
ABSTRACTHigh-resolution x-ray triple axis diffractometry was used to characterize damage recovery... more ABSTRACTHigh-resolution x-ray triple axis diffractometry was used to characterize damage recovery in gallium arsenide implanted with gallium or indium ions, and co-implanted with carbon ions. From reciprocal space mapping around the (004) reciprocal lattice point, the evolution of residual strain and the lattice plane tilt induced by the ion implantation and annealing processes were analyzed. The lattice damage in implanted gallium arsenide is dependent on the dose and ion type; annealing subsequently alters the structural properties of the material. For example, In/C co-implanted gallium arsenide shows a greater amount of residual damage as compared to Ga/C co-implanted gallium arsenide after rapid thermal annealing at 885 °C for 5 seconds. For a given Group III ion / C co-implant, we observe the highest p-type activation when the Group III ion and C implant doses are the same. Increasing the Group III ion dose reduces the material quality and has a concomitant negative effect on the electrical properties of the material. These results suggest that reciprocal space maps can provide insight into the relationship between the structure and properties of implanted compound semiconductors.
ABSTRACTComparison of high resolution x-ray diffraction and transmission electron microscopy meas... more ABSTRACTComparison of high resolution x-ray diffraction and transmission electron microscopy measurements of Si-based heterostructures demonstrates that diffraction is much more sensitive to strain relaxation than previously reported. This study used as-grown and annealed Si1-x Gex structures grown on (001) Si by UHV/CVD. (004), (113), and (115) rocking curves were employed. Using the TEM measurements as a quantitative guide, relaxation was observed in rocking curves when the misfit dislocation line density was as low as 1 μ-1. Also, interference fringes strongly depend on the presence of interfacial defects. At higher dislocation densities, the diffraction peak from the epitaxial layer broadens considerably but does not shift to a position that represents complete relaxation. Broadening of the substrate diffraction peak also occurs, which is due to dislocations that loop into the substrate.
Window integrated photovoltaics for automotive and building applications are a promising market s... more Window integrated photovoltaics for automotive and building applications are a promising market segment for organic solar modules. Besides semi‐transparency, window integrated applications require a reasonable transparency perception and good color rendering properties in order to be suitable for realistic scene illumination. Here, the transmitted light through semi‐transparent organic solar cells comprising the polymer/fullerene blend poly[(4,4'‐bis(2‐ethylhexyl)dithieno[3,2‐b:2',3'‐d]silole)‐2,6‐diyl‐alt‐(2,1,3‐benzothiadiazole)‐4,7‐diyl]: [6,6]‐phenyl C71‐butric acid methyl ester (PSBTBT:PC70BM) as active layer and a sputtered aluminum doped zinc oxide cathode were found to exhibit a color neutral perception for the human eye and very good color rendering properties. Moreover, the electrical cell properties allow for efficient energy harvesting with an overall power conversion efficiency η ≈ 3%.
A uniform dispersion of highly soluble phosphorescent dendrimer emitters is achieved by blending ... more A uniform dispersion of highly soluble phosphorescent dendrimer emitters is achieved by blending with a polymer host poly(9-vinylcarbazole) (PVK) containing N,N 0-diphenyl-N, N 0-(bis(3-methylphenyl)-[1,1-biphenyl]-4,4 0-diamine (TPD) and 2-(4-biphen-4 0-yl)-5-(4tert-butylphenyl)-1,3,4-oxadiazole (PBD). No visible aggregation or self-quenching was observed for guest-to-host weight ratios of up to 33:67. The dendrimers contain a factris(2-phenylpyridyl)iridium(III) [Ir(ppy) 3 ] core, first generation biphenyl-based dendrons, and 2-ethylhexyloxy surface groups. The guest-host blend is used for all solution processed organic light-emitting diodes. A maximum external and current efficiency of 10.2% and 38 cd/A (at 5 V and a brightness of 50 cd/m 2), and a maximum brightness of 27,000 cd/m 2 (at 14.5 V), were obtained when a CsF/Al cathode was used. Blade coating was used to fabricate a multi-layer structure that also contained an electron-transport layer. The device that had a LiF/Al cathode had a maximal efficiency of 40 cd/A corresponding to an external quantum efficiency of 10.8% (at 5 V and a brightness of 19 cd/m 2). The maximum brightness of the second device was 17,840 cd/m 2 at 14 V.
The transient response of low-temperature-grown GaAs was investigated with time-resolved photoref... more The transient response of low-temperature-grown GaAs was investigated with time-resolved photoreflectance (PR), photo-transmittance (PT), and photoconductivity (PC). The shape of the PR traces in the first few picoseconds was found to depend strongly on the wavelength. Despite of the drastic difference in appearance, these PR traces can all be well fitted by the sum of a fast positive, a fast
Time-resolved photoreflectance (PR) and photo-transmittance (PT) of a GaAs layer grown on r-cut s... more Time-resolved photoreflectance (PR) and photo-transmittance (PT) of a GaAs layer grown on r-cut sapphire substrate at 220^oC were measured. Similar to our previous observation from LT-GaAs grown on semi-insulating GaAs substrates, the PR traces show strong spectral dependence and can be well fitted by the sum of a fast positive, a fast negative and a slow positive component, each being calculated by convolving a single-sided exponential function with the measured laser autocorrelation. The fitting parameters indicate that the spectral dependence results mainly from the change in amplitude of the negative component. Since the LT-GaAs grown on sapphire is amorphous, as determined by X-ray diffraction, we conclude that the negative component does not come from the long-range crystallinity of the sample. The time constant of the fast positive component is consistent with the interpretation that the carrier trapping dominates the relaxation in the first few picoseconds. The implications will be discussed.
Journal of vacuum science & technology, May 1, 1989
The atomic structures of (331)-A and (331)-B GaAs surfaces, prepared by ion bombardment and annea... more The atomic structures of (331)-A and (331)-B GaAs surfaces, prepared by ion bombardment and annealing (IBA) or by molecular-beam epitaxy, are investigated with low-energy electron diffraction, electron energy-loss spectroscopy, and Auger electron spectroscopy. The IBA (331)-A surface exhibits double-layer steps at rather low temperature, and develops large (110) and (111) facets after further annealing at ∼420 °C; the (331)-B surface is flat up to annealing temperatures ∼600 °C, and exhibits large {110} and (111) facets after further annealing. When prepared by molecular-beam epitaxy, the (331)-A surface exhibits double-layer steps after annealing up to ∼550 °C, and develop (110) and (111) facets after further annealing; the (331)-B surface is flat up to annealing at 550 °C, and exhibits double-layer steps after further annealing at 600 °C; it then develops large {110} and (111) facets after further annealing.
Journal of vacuum science & technology, Jul 1, 1989
Bi layers deposited on (100) GaAs are investigated with low-energy electron diffraction, Auger el... more Bi layers deposited on (100) GaAs are investigated with low-energy electron diffraction, Auger electron spectroscopy, and electron energy-loss spectroscopy. The (100) substrates are prepared by simultaneous Ar+ sputtering and annealing. The deposition ofBi on room-temperature (100) GaAs eliminates the reconstruction spots at 0.5 monolayer. No long-range order is obtained in the room temperature grown Bi layer. Post-growth annealing at 250 •C restores long-range order and produces a sixfold symmetric hexagonal pattern characteristic of the rhombohedral structure of bulk Bi. The attenuation of the Auger peak intensities as a function ofBi thickness indicates that the film grows in a quasi-laminar fashion. The deposition ofBi on high-temperature (100) GaAs (250 •C) produces a two-dimensional ordered growth. The GaAs (4 X 6) structure is replaced by a (2 Xl) structure after deposition of one-half monolayer Bi. These (2 Xl) structure remains visible up to coverages of at least 25 monolayers. Auger measurements indicate island formation, while the sharpness of the electron diffraction spots indicates good crystallinity at the surface of the Bi crystal.
In this research work, the gas sensing properties of halogenated chloroaluminum phthalocyanine (C... more In this research work, the gas sensing properties of halogenated chloroaluminum phthalocyanine (ClAlPc) thin films were studied at room temperature. We fabricated an air-stable ClAlPc gas sensor based on a vertical organic diode (VOD) with a porous top electrode by the solution process method. The surface morphology of the solution-processed ClAlPc thin film was examined by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The proposed ClAlPc-based VOD sensor can detect ammonia (NH3) gas at the ppb level (100~1000 ppb) at room temperature. Additionally, the ClAlPc sensor was highly selective towards NH3 gas compared to other interfering gases (NO2, ACE, NO, H2S, and CO). In addition, the device lifetime was tested by storing the device at ambient conditions. The effect of relative humidity (RH) on the ClAlPc NH3 gas sensor was also explored. The aim of this study is to extend these findings on halogenated phthalocyanine-based materials to practic...
A NO sensing tip is made by inserting two parallel optical fibers inside a poly 2-hydroxyethyl me... more A NO sensing tip is made by inserting two parallel optical fibers inside a poly 2-hydroxyethyl methacrylate (PolyHEMA) hydrogel waveguide mixed with the probe molecule 1, 2-Diaminoanthraquinone (DAQ). There is a length difference of 1 mm between the two fibers, and the light has to propagate through the difference from the short fiber to the long fiber. The total cross section area of the active hydrogel waveguide embedded with the fibers is only 3mm x 1.2 mm. For practical use the tip is housed in a needle for mechanical protection and the sensing tip is able to detect aqueous NO concentration around 1 μM with time resolution about 5 minutes. Such a sensing tip can be used to monitor the medical conditions inside the brain after a stroke or a brain injury.
Bio-inspired materials have received significant interest in the development of flexible electron... more Bio-inspired materials have received significant interest in the development of flexible electronics due to their natural grid structures, especially natural leaf vein networks. In this work, a bio-inspired leaf vein-based flexible humidity sensor is demonstrated. The proposed sensor is composed of a leaf/Al/glycerin/Ag paste. The Al-deposited leaf vein networks are used as a bottom electrode with a resistance of around 100 Ω. The humidity sensor responds well to relative humidity (RH) levels ranging from 15% to 70% at room temperature. The fabricated humidity sensor exhibits an ultra-sensitive response to different humidity conditions due to the biodegradable insulating hygroscopic polymer (glycerin), specifically the ionic conductivity reaction. To further verify the presence of ionic conduction, the device performance is tested by doping NaCl salt into the hygroscopic polymer sensing layer. In addition, both the repeatability and flexibility of the sensor are tested under differe...
The performance of OPV module is strongly dominated by the innovating materials and state of the ... more The performance of OPV module is strongly dominated by the innovating materials and state of the art processes. Herein, we present a large-area and solution-processable OPV module, which the non-fullerene based active layer and interlayers are all deposited by blade coating. The module achieved a power conversion efficiency of 9.5% under 100 mW/cm 2 AM1.5G irradiation with an active area of 216 cm 2 on a 30 cm by 20 cm substrate. The power output can still maintain about 92.5% of the initial performance after 610 h of light soaking under 10000 lux LED irradiation. To the best of knowledge, it is the record high efficiency by far for OPV module with an active area over a hundred square centimeters.
This is a PDF file of an article that has undergone enhancements after acceptance, such as the ad... more This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.
Journal of The Electrochemical Society, Nov 1, 1993
An investigation of the Ge composition profile, layer thickness, and crystalline quality of Si/Si... more An investigation of the Ge composition profile, layer thickness, and crystalline quality of Si/Si 1-x Ge x /Si heterojunction bipolar transistor-type structures was conducted using high resolution x-ray diffraction. Diffraction scans from (004) and (113) diffraction planes were analyzed. These experimental measurements were matched to scans that were simulated using a dynamical diffraction model to determine the Ge profile and layer thickness. Structural parameters were determined to 2 to 3 nm in layer thickness and ±0.003 in Ge mole fraction with the aid of the simulations and curve fitting. The Ge profile determined from these measurements compared very favorably to the profile determined by secondary ion mass spectroscopy measurements
The strain and crystalline perfection of GaAs implanted with either carbon, gallium, or both carb... more The strain and crystalline perfection of GaAs implanted with either carbon, gallium, or both carbon and gallium ions (5×1014 cm−2) were investigated using high-resolution triple axis diffractometry. We determined that a significant amount of carbon occupied substitutional sites after rapid thermal annealing only when gallium was co-implanted. The carbon in the carbon-implanted layer remained in nonsubstitutional sites after annealing. In both cases, most of the lattice strain in the implanted layer decreases upon annealing, but a defective crystalline structure with an extensive mosaic spread evolves. Conventional double-axis x-ray measurements were employed for comparison.
ABSTRACTHigh-resolution x-ray triple axis diffractometry was used to characterize damage recovery... more ABSTRACTHigh-resolution x-ray triple axis diffractometry was used to characterize damage recovery in gallium arsenide implanted with gallium or indium ions, and co-implanted with carbon ions. From reciprocal space mapping around the (004) reciprocal lattice point, the evolution of residual strain and the lattice plane tilt induced by the ion implantation and annealing processes were analyzed. The lattice damage in implanted gallium arsenide is dependent on the dose and ion type; annealing subsequently alters the structural properties of the material. For example, In/C co-implanted gallium arsenide shows a greater amount of residual damage as compared to Ga/C co-implanted gallium arsenide after rapid thermal annealing at 885 °C for 5 seconds. For a given Group III ion / C co-implant, we observe the highest p-type activation when the Group III ion and C implant doses are the same. Increasing the Group III ion dose reduces the material quality and has a concomitant negative effect on the electrical properties of the material. These results suggest that reciprocal space maps can provide insight into the relationship between the structure and properties of implanted compound semiconductors.
ABSTRACTComparison of high resolution x-ray diffraction and transmission electron microscopy meas... more ABSTRACTComparison of high resolution x-ray diffraction and transmission electron microscopy measurements of Si-based heterostructures demonstrates that diffraction is much more sensitive to strain relaxation than previously reported. This study used as-grown and annealed Si1-x Gex structures grown on (001) Si by UHV/CVD. (004), (113), and (115) rocking curves were employed. Using the TEM measurements as a quantitative guide, relaxation was observed in rocking curves when the misfit dislocation line density was as low as 1 μ-1. Also, interference fringes strongly depend on the presence of interfacial defects. At higher dislocation densities, the diffraction peak from the epitaxial layer broadens considerably but does not shift to a position that represents complete relaxation. Broadening of the substrate diffraction peak also occurs, which is due to dislocations that loop into the substrate.
Window integrated photovoltaics for automotive and building applications are a promising market s... more Window integrated photovoltaics for automotive and building applications are a promising market segment for organic solar modules. Besides semi‐transparency, window integrated applications require a reasonable transparency perception and good color rendering properties in order to be suitable for realistic scene illumination. Here, the transmitted light through semi‐transparent organic solar cells comprising the polymer/fullerene blend poly[(4,4'‐bis(2‐ethylhexyl)dithieno[3,2‐b:2',3'‐d]silole)‐2,6‐diyl‐alt‐(2,1,3‐benzothiadiazole)‐4,7‐diyl]: [6,6]‐phenyl C71‐butric acid methyl ester (PSBTBT:PC70BM) as active layer and a sputtered aluminum doped zinc oxide cathode were found to exhibit a color neutral perception for the human eye and very good color rendering properties. Moreover, the electrical cell properties allow for efficient energy harvesting with an overall power conversion efficiency η ≈ 3%.
A uniform dispersion of highly soluble phosphorescent dendrimer emitters is achieved by blending ... more A uniform dispersion of highly soluble phosphorescent dendrimer emitters is achieved by blending with a polymer host poly(9-vinylcarbazole) (PVK) containing N,N 0-diphenyl-N, N 0-(bis(3-methylphenyl)-[1,1-biphenyl]-4,4 0-diamine (TPD) and 2-(4-biphen-4 0-yl)-5-(4tert-butylphenyl)-1,3,4-oxadiazole (PBD). No visible aggregation or self-quenching was observed for guest-to-host weight ratios of up to 33:67. The dendrimers contain a factris(2-phenylpyridyl)iridium(III) [Ir(ppy) 3 ] core, first generation biphenyl-based dendrons, and 2-ethylhexyloxy surface groups. The guest-host blend is used for all solution processed organic light-emitting diodes. A maximum external and current efficiency of 10.2% and 38 cd/A (at 5 V and a brightness of 50 cd/m 2), and a maximum brightness of 27,000 cd/m 2 (at 14.5 V), were obtained when a CsF/Al cathode was used. Blade coating was used to fabricate a multi-layer structure that also contained an electron-transport layer. The device that had a LiF/Al cathode had a maximal efficiency of 40 cd/A corresponding to an external quantum efficiency of 10.8% (at 5 V and a brightness of 19 cd/m 2). The maximum brightness of the second device was 17,840 cd/m 2 at 14 V.
The transient response of low-temperature-grown GaAs was investigated with time-resolved photoref... more The transient response of low-temperature-grown GaAs was investigated with time-resolved photoreflectance (PR), photo-transmittance (PT), and photoconductivity (PC). The shape of the PR traces in the first few picoseconds was found to depend strongly on the wavelength. Despite of the drastic difference in appearance, these PR traces can all be well fitted by the sum of a fast positive, a fast
Time-resolved photoreflectance (PR) and photo-transmittance (PT) of a GaAs layer grown on r-cut s... more Time-resolved photoreflectance (PR) and photo-transmittance (PT) of a GaAs layer grown on r-cut sapphire substrate at 220^oC were measured. Similar to our previous observation from LT-GaAs grown on semi-insulating GaAs substrates, the PR traces show strong spectral dependence and can be well fitted by the sum of a fast positive, a fast negative and a slow positive component, each being calculated by convolving a single-sided exponential function with the measured laser autocorrelation. The fitting parameters indicate that the spectral dependence results mainly from the change in amplitude of the negative component. Since the LT-GaAs grown on sapphire is amorphous, as determined by X-ray diffraction, we conclude that the negative component does not come from the long-range crystallinity of the sample. The time constant of the fast positive component is consistent with the interpretation that the carrier trapping dominates the relaxation in the first few picoseconds. The implications will be discussed.
Journal of vacuum science & technology, May 1, 1989
The atomic structures of (331)-A and (331)-B GaAs surfaces, prepared by ion bombardment and annea... more The atomic structures of (331)-A and (331)-B GaAs surfaces, prepared by ion bombardment and annealing (IBA) or by molecular-beam epitaxy, are investigated with low-energy electron diffraction, electron energy-loss spectroscopy, and Auger electron spectroscopy. The IBA (331)-A surface exhibits double-layer steps at rather low temperature, and develops large (110) and (111) facets after further annealing at ∼420 °C; the (331)-B surface is flat up to annealing temperatures ∼600 °C, and exhibits large {110} and (111) facets after further annealing. When prepared by molecular-beam epitaxy, the (331)-A surface exhibits double-layer steps after annealing up to ∼550 °C, and develop (110) and (111) facets after further annealing; the (331)-B surface is flat up to annealing at 550 °C, and exhibits double-layer steps after further annealing at 600 °C; it then develops large {110} and (111) facets after further annealing.
Journal of vacuum science & technology, Jul 1, 1989
Bi layers deposited on (100) GaAs are investigated with low-energy electron diffraction, Auger el... more Bi layers deposited on (100) GaAs are investigated with low-energy electron diffraction, Auger electron spectroscopy, and electron energy-loss spectroscopy. The (100) substrates are prepared by simultaneous Ar+ sputtering and annealing. The deposition ofBi on room-temperature (100) GaAs eliminates the reconstruction spots at 0.5 monolayer. No long-range order is obtained in the room temperature grown Bi layer. Post-growth annealing at 250 •C restores long-range order and produces a sixfold symmetric hexagonal pattern characteristic of the rhombohedral structure of bulk Bi. The attenuation of the Auger peak intensities as a function ofBi thickness indicates that the film grows in a quasi-laminar fashion. The deposition ofBi on high-temperature (100) GaAs (250 •C) produces a two-dimensional ordered growth. The GaAs (4 X 6) structure is replaced by a (2 Xl) structure after deposition of one-half monolayer Bi. These (2 Xl) structure remains visible up to coverages of at least 25 monolayers. Auger measurements indicate island formation, while the sharpness of the electron diffraction spots indicates good crystallinity at the surface of the Bi crystal.
In this research work, the gas sensing properties of halogenated chloroaluminum phthalocyanine (C... more In this research work, the gas sensing properties of halogenated chloroaluminum phthalocyanine (ClAlPc) thin films were studied at room temperature. We fabricated an air-stable ClAlPc gas sensor based on a vertical organic diode (VOD) with a porous top electrode by the solution process method. The surface morphology of the solution-processed ClAlPc thin film was examined by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The proposed ClAlPc-based VOD sensor can detect ammonia (NH3) gas at the ppb level (100~1000 ppb) at room temperature. Additionally, the ClAlPc sensor was highly selective towards NH3 gas compared to other interfering gases (NO2, ACE, NO, H2S, and CO). In addition, the device lifetime was tested by storing the device at ambient conditions. The effect of relative humidity (RH) on the ClAlPc NH3 gas sensor was also explored. The aim of this study is to extend these findings on halogenated phthalocyanine-based materials to practic...
A NO sensing tip is made by inserting two parallel optical fibers inside a poly 2-hydroxyethyl me... more A NO sensing tip is made by inserting two parallel optical fibers inside a poly 2-hydroxyethyl methacrylate (PolyHEMA) hydrogel waveguide mixed with the probe molecule 1, 2-Diaminoanthraquinone (DAQ). There is a length difference of 1 mm between the two fibers, and the light has to propagate through the difference from the short fiber to the long fiber. The total cross section area of the active hydrogel waveguide embedded with the fibers is only 3mm x 1.2 mm. For practical use the tip is housed in a needle for mechanical protection and the sensing tip is able to detect aqueous NO concentration around 1 μM with time resolution about 5 minutes. Such a sensing tip can be used to monitor the medical conditions inside the brain after a stroke or a brain injury.
Bio-inspired materials have received significant interest in the development of flexible electron... more Bio-inspired materials have received significant interest in the development of flexible electronics due to their natural grid structures, especially natural leaf vein networks. In this work, a bio-inspired leaf vein-based flexible humidity sensor is demonstrated. The proposed sensor is composed of a leaf/Al/glycerin/Ag paste. The Al-deposited leaf vein networks are used as a bottom electrode with a resistance of around 100 Ω. The humidity sensor responds well to relative humidity (RH) levels ranging from 15% to 70% at room temperature. The fabricated humidity sensor exhibits an ultra-sensitive response to different humidity conditions due to the biodegradable insulating hygroscopic polymer (glycerin), specifically the ionic conductivity reaction. To further verify the presence of ionic conduction, the device performance is tested by doping NaCl salt into the hygroscopic polymer sensing layer. In addition, both the repeatability and flexibility of the sensor are tested under differe...
The performance of OPV module is strongly dominated by the innovating materials and state of the ... more The performance of OPV module is strongly dominated by the innovating materials and state of the art processes. Herein, we present a large-area and solution-processable OPV module, which the non-fullerene based active layer and interlayers are all deposited by blade coating. The module achieved a power conversion efficiency of 9.5% under 100 mW/cm 2 AM1.5G irradiation with an active area of 216 cm 2 on a 30 cm by 20 cm substrate. The power output can still maintain about 92.5% of the initial performance after 610 h of light soaking under 10000 lux LED irradiation. To the best of knowledge, it is the record high efficiency by far for OPV module with an active area over a hundred square centimeters.
This is a PDF file of an article that has undergone enhancements after acceptance, such as the ad... more This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.
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