2021 International Conference on Communication, Control and Information Sciences (ICCISc)
We have studied impact of Interface Trap Charges on Hetero-dielectric Dual Metal Gate GaSb-Si NWT... more We have studied impact of Interface Trap Charges on Hetero-dielectric Dual Metal Gate GaSb-Si NWTFET (HD-NWTFET) device performance. Variations in DC performance parameters such as the transfer characteristics, I<inf>on</inf>/I<inf>off</inf> Ratio and output characteristics has been investigated for both positive and negative ITCs. Furthermore, variations in RF performance metrics namely trans-conductance g<inf>m</inf>, Drain Conductance g<inf>d</inf>, Parasitics Capacitance C<inf>gd</inf>, Transconductance Frequency Product TFP, Cutoff Frequency f<inf>T</inf>, Gain-Bandwidth Product GBP, Maximum Oscillating Frequency f<inf>max</inf>, Transit Time τ have also been studied. Lastly, the variations in Linearity performance metrics namely VIP<inf>2</inf>, VIP<inf>3</inf>, IMD<inf>3</inf> and IIP<inf>3</inf> in the presence of ITCs is also studied.
2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS), 2020
In this manuscript, a 3D simulation model of FinFET is proposed. The device is designed in such a... more In this manuscript, a 3D simulation model of FinFET is proposed. The device is designed in such a manner that the gate is made with three metals of different work functions, so it’s named as Tri-Metal Gate (TMG) FinFET. The work function at source/channel junction is kept high in comparison to the drain/channel junction to reduce DIBL and improve transconductance. This structure improves ONstate current, with suppressed OFF-state current. Further DC and analog/RF characteristics such as transfer characteristics, parasitic capacitance (Cgd, Cgs), transconductance (gm), cut off frequency (fT), output transconductance (gds), transconductance generation factor(TGF) are investigated. A comparative analysis of the proposed device with an existing device is also performed and results are studies. Above parameters support its utility at ultra-low power VLSI. The device has been simulated using TCAD simulator.
2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS), 2020
Improvement in current driving capability, steep subthreshold slope and reduction in ambipolarity... more Improvement in current driving capability, steep subthreshold slope and reduction in ambipolarity are the prerequisite for FET's to make better Analog/RF circuit applications. So, this paper describes a novel structure of a charge plasma Tunnel FET which consists of a dual metal strip implanted in the oxide region at source-channel (S/C) and drain-channel (D/C) interfaces to improve the current driving capability and to lower the ambi-polar behavior respectively. The metal strip implanted controls the lateral band-to-band tunneling, resulting in tunneling of more charge carriers at the S/C junction which further provides enhanced current driving capacity for device. At D/C junction, it widens the energy bands resulting in reduced ambipolarity. To get the desired results from the device, variation of energy bands is studied for the conventional and proposed device under different biases. Also, RF parameters are studied for the applicability of device at high frequency.
2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS), 2020
A Nanowire TFET device employing a Dual Metal Gate along with a combination of lower energy band ... more A Nanowire TFET device employing a Dual Metal Gate along with a combination of lower energy band gap III- V material for the source and Doping Pockets around the SC- junction to boost On-current is proposed. Gaussian Doping is exploited on the Drain side suppressing the ambi-polar and off-state currents. The proposed device (DMG DP GaSb-Si NWTFET) is judged against a vanilla Silicon Nanowire TFET (Si- NWTFET). Both these TFET devices are analyzed for their DC and Analog Characteristics. The modified device exhibits a much superior ON-current, OFF-current and Subthreshold Slope (SS) along with improvements in trans-conductance (gm), parasitic capacitance, Cutoff frequency (fT), transmit time (td) and the Gain-Bandwidth Product. The improved device is optimized for gate metal workfunctions and Pocket Doping Concentrations. The device is proposed as a suitable replacement to CMOS for low power applications.
2021 International Conference on Communication, Control and Information Sciences (ICCISc), 2021
We have studied the impact of temperature variation on Dual Metal Gate GaSb-Si NWTFET device perf... more We have studied the impact of temperature variation on Dual Metal Gate GaSb-Si NWTFET device performance. Variations in DC parameters namely the transfer characteristics, Threshold Voltage, I<inf>on</inf>/I<inf>off</inf> Ratio, Subthreshold Swing has been investigated for temperatures from 250K to 400K. Furthermore, variations in RF performance metrics namely trans-conductance g<inf>m</inf>, Drain Conductance g<inf>d</inf>, Parasitics Capacitance C<inf>gd</inf> C<inf>gs</inf>, Intrinsic Gain g<inf>m</inf>/g<inf>d</inf>, Transconductance Frequency Product TFP, Cutoff Frequency f<inf>T</inf>, Gain Frequency Product GFP, Gain Bandwidth Product GBP, Transit Time τ for different temperatures have also been studied. Lastly, the variations in Linearity performance metrics namely VIP<inf>2</inf>, VIP<inf>3</inf>, IMD<inf>3</inf> and IIP<inf>3</inf> for different temperatures is studied.
2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS), 2020
In this paper, a novel device structure is introduced to enhance ON-state current, reduce ambipol... more In this paper, a novel device structure is introduced to enhance ON-state current, reduce ambipolar behaviour and better subthreshold swing which is named as step channel tunnel FETs (SC-TFET). This device use small dielectric thickness at source-channel junction to improve device performance. Subthreshold Swing of device is improved due to reduced dielectric thickness at source-channel junction and ambipolar current of device is suppressed by using large dielectric thickness at drainchannel junction. For further improvement of ON-state current high-k dielectric material is introduced as oxide layer which is named as High-K SC-TFET. To analyses device performance characteristics various parameters has been calculated such as parasitic capacitance, transconductance (gm), output transconductance (gds) and cut-off frequency (fT). Finally, a study between conventional TFET, SC-TFET and High-K SC-TFET has been investigated which shows its significant contribution in analog and RF parameters. All the simulations of purpose device have been done using TCAD device simulator.
International Journal of Big Data and Analytics in Healthcare, 2019
In this era of technological growth, the diagnosis of diseases and finding cures, personal health... more In this era of technological growth, the diagnosis of diseases and finding cures, personal health parameter management and predicting the possibility of susceptibility to some diseases have become accessible and easy. Although all over the world millions of people are falling victim to diabetes, in most of the cases they are not even aware of their situation due to the silent nature of diabetes. Therefore, the objective of this research is to propose an intelligent system based on a machine learning algorithm to improve the accuracy of predicting diabetes. To attain this objective, an algorithm was proposed based on Naïve Bayes with prior clustering. Second, the performance of the proposed algorithm was evaluated using 532 data related to diabetic patients. Finally, the performance of the existing Naïve Bayes algorithm was compared with the proposed algorithm. The results of the comparative study showed that the improvement in the accuracy has been made apparent for the proposed alg...
International Journal of Image Processing and Vision Science, 2012
The median filter is an important filter in many image processing algorithms and especially in re... more The median filter is an important filter in many image processing algorithms and especially in removal of salt and pepper noise. Traditional median filters either focus on improving the performance or the quality of the median filtering. Generally, the methods which optimize performance do so at the cost of quality and vice-versa. In this paper a novel approach to median filtering is presented providing both better performance and quality without sacrificing either. The analysis is presented with respect to image processing and the results obtained are presented in tabular form.
2021 International Conference on Communication, Control and Information Sciences (ICCISc)
We have studied impact of Interface Trap Charges on Hetero-dielectric Dual Metal Gate GaSb-Si NWT... more We have studied impact of Interface Trap Charges on Hetero-dielectric Dual Metal Gate GaSb-Si NWTFET (HD-NWTFET) device performance. Variations in DC performance parameters such as the transfer characteristics, I<inf>on</inf>/I<inf>off</inf> Ratio and output characteristics has been investigated for both positive and negative ITCs. Furthermore, variations in RF performance metrics namely trans-conductance g<inf>m</inf>, Drain Conductance g<inf>d</inf>, Parasitics Capacitance C<inf>gd</inf>, Transconductance Frequency Product TFP, Cutoff Frequency f<inf>T</inf>, Gain-Bandwidth Product GBP, Maximum Oscillating Frequency f<inf>max</inf>, Transit Time τ have also been studied. Lastly, the variations in Linearity performance metrics namely VIP<inf>2</inf>, VIP<inf>3</inf>, IMD<inf>3</inf> and IIP<inf>3</inf> in the presence of ITCs is also studied.
2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS), 2020
In this manuscript, a 3D simulation model of FinFET is proposed. The device is designed in such a... more In this manuscript, a 3D simulation model of FinFET is proposed. The device is designed in such a manner that the gate is made with three metals of different work functions, so it’s named as Tri-Metal Gate (TMG) FinFET. The work function at source/channel junction is kept high in comparison to the drain/channel junction to reduce DIBL and improve transconductance. This structure improves ONstate current, with suppressed OFF-state current. Further DC and analog/RF characteristics such as transfer characteristics, parasitic capacitance (Cgd, Cgs), transconductance (gm), cut off frequency (fT), output transconductance (gds), transconductance generation factor(TGF) are investigated. A comparative analysis of the proposed device with an existing device is also performed and results are studies. Above parameters support its utility at ultra-low power VLSI. The device has been simulated using TCAD simulator.
2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS), 2020
Improvement in current driving capability, steep subthreshold slope and reduction in ambipolarity... more Improvement in current driving capability, steep subthreshold slope and reduction in ambipolarity are the prerequisite for FET's to make better Analog/RF circuit applications. So, this paper describes a novel structure of a charge plasma Tunnel FET which consists of a dual metal strip implanted in the oxide region at source-channel (S/C) and drain-channel (D/C) interfaces to improve the current driving capability and to lower the ambi-polar behavior respectively. The metal strip implanted controls the lateral band-to-band tunneling, resulting in tunneling of more charge carriers at the S/C junction which further provides enhanced current driving capacity for device. At D/C junction, it widens the energy bands resulting in reduced ambipolarity. To get the desired results from the device, variation of energy bands is studied for the conventional and proposed device under different biases. Also, RF parameters are studied for the applicability of device at high frequency.
2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS), 2020
A Nanowire TFET device employing a Dual Metal Gate along with a combination of lower energy band ... more A Nanowire TFET device employing a Dual Metal Gate along with a combination of lower energy band gap III- V material for the source and Doping Pockets around the SC- junction to boost On-current is proposed. Gaussian Doping is exploited on the Drain side suppressing the ambi-polar and off-state currents. The proposed device (DMG DP GaSb-Si NWTFET) is judged against a vanilla Silicon Nanowire TFET (Si- NWTFET). Both these TFET devices are analyzed for their DC and Analog Characteristics. The modified device exhibits a much superior ON-current, OFF-current and Subthreshold Slope (SS) along with improvements in trans-conductance (gm), parasitic capacitance, Cutoff frequency (fT), transmit time (td) and the Gain-Bandwidth Product. The improved device is optimized for gate metal workfunctions and Pocket Doping Concentrations. The device is proposed as a suitable replacement to CMOS for low power applications.
2021 International Conference on Communication, Control and Information Sciences (ICCISc), 2021
We have studied the impact of temperature variation on Dual Metal Gate GaSb-Si NWTFET device perf... more We have studied the impact of temperature variation on Dual Metal Gate GaSb-Si NWTFET device performance. Variations in DC parameters namely the transfer characteristics, Threshold Voltage, I<inf>on</inf>/I<inf>off</inf> Ratio, Subthreshold Swing has been investigated for temperatures from 250K to 400K. Furthermore, variations in RF performance metrics namely trans-conductance g<inf>m</inf>, Drain Conductance g<inf>d</inf>, Parasitics Capacitance C<inf>gd</inf> C<inf>gs</inf>, Intrinsic Gain g<inf>m</inf>/g<inf>d</inf>, Transconductance Frequency Product TFP, Cutoff Frequency f<inf>T</inf>, Gain Frequency Product GFP, Gain Bandwidth Product GBP, Transit Time τ for different temperatures have also been studied. Lastly, the variations in Linearity performance metrics namely VIP<inf>2</inf>, VIP<inf>3</inf>, IMD<inf>3</inf> and IIP<inf>3</inf> for different temperatures is studied.
2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS), 2020
In this paper, a novel device structure is introduced to enhance ON-state current, reduce ambipol... more In this paper, a novel device structure is introduced to enhance ON-state current, reduce ambipolar behaviour and better subthreshold swing which is named as step channel tunnel FETs (SC-TFET). This device use small dielectric thickness at source-channel junction to improve device performance. Subthreshold Swing of device is improved due to reduced dielectric thickness at source-channel junction and ambipolar current of device is suppressed by using large dielectric thickness at drainchannel junction. For further improvement of ON-state current high-k dielectric material is introduced as oxide layer which is named as High-K SC-TFET. To analyses device performance characteristics various parameters has been calculated such as parasitic capacitance, transconductance (gm), output transconductance (gds) and cut-off frequency (fT). Finally, a study between conventional TFET, SC-TFET and High-K SC-TFET has been investigated which shows its significant contribution in analog and RF parameters. All the simulations of purpose device have been done using TCAD device simulator.
International Journal of Big Data and Analytics in Healthcare, 2019
In this era of technological growth, the diagnosis of diseases and finding cures, personal health... more In this era of technological growth, the diagnosis of diseases and finding cures, personal health parameter management and predicting the possibility of susceptibility to some diseases have become accessible and easy. Although all over the world millions of people are falling victim to diabetes, in most of the cases they are not even aware of their situation due to the silent nature of diabetes. Therefore, the objective of this research is to propose an intelligent system based on a machine learning algorithm to improve the accuracy of predicting diabetes. To attain this objective, an algorithm was proposed based on Naïve Bayes with prior clustering. Second, the performance of the proposed algorithm was evaluated using 532 data related to diabetic patients. Finally, the performance of the existing Naïve Bayes algorithm was compared with the proposed algorithm. The results of the comparative study showed that the improvement in the accuracy has been made apparent for the proposed alg...
International Journal of Image Processing and Vision Science, 2012
The median filter is an important filter in many image processing algorithms and especially in re... more The median filter is an important filter in many image processing algorithms and especially in removal of salt and pepper noise. Traditional median filters either focus on improving the performance or the quality of the median filtering. Generally, the methods which optimize performance do so at the cost of quality and vice-versa. In this paper a novel approach to median filtering is presented providing both better performance and quality without sacrificing either. The analysis is presented with respect to image processing and the results obtained are presented in tabular form.
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