—In this paper, a simple and accurate circuit-simulator compact model for gallium nitride (GaN) h... more —In this paper, a simple and accurate circuit-simulator compact model for gallium nitride (GaN) high electron mobility transistor is proposed and validated under both static and switching conditions. A novel feature of this model is that it is valid also in the third quadrant, which is important when the device operates as a freewheeling diode. The only measurements required for the parameter extraction are simple I–V static characteristics and C–V characteristics. A detailed parameter extraction procedure is presented. Furthermore, a double-pulse test-bench is built to characterize the resistive and inductive switching behavior of the GaN device. A simulation model is built in Pspice software tool, considering the parasitic elements associated with the printed circuit board interconnections and other test-bench components (load resistor, load inductor, and current shunt monitor). The Pspice simulation results are compared with experimental results. The comparison shows good agreement between simulation and experimental results under both resistive and inductive switching conditions. Operation in the third quadrant under inductive switching is also validated.
— Wide bandgap power devices have emerged as an often superior alternative power switch technolog... more — Wide bandgap power devices have emerged as an often superior alternative power switch technology for many power electronic applications. These devices theoretically have excellent material properties enabling power device operation at higher switching frequencies and higher temperatures compared with conventional silicon devices. However, material defects can dominate device behavior, particularly over time, and this should be strongly considered when trying to model actual characteristics of currently available devices. Compact models of wide bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Available compact models, i.e., models compatible with circuit-level simulators, are reviewed. In particular, this paper presents a review of compact models for silicon carbide power diodes and MOSFETs. Index Terms— Gallium-nitride (GaN), modeling, power device modeling, power semiconductor devices, silicon-carbide (SiC), wide bandgap.
—Silicon Carbide (SiC) power semiconductor devices are expected to achieve better performance tha... more —Silicon Carbide (SiC) power semiconductor devices are expected to achieve better performance than silicon power devices in high-switching-frequency, high-power and high-temperature applications. Several commercial SiC MOSFETs and SiC Schottky diodes are available on the market, and SiC power devices with higher power ratings are expected in the future. This paper presents a performance projection method and a scalable loss model for both SiC MOSFETs and SiC Schottky diodes. The performance projection method provides estimated parameters also for upcoming devices with higher power ratings than currently commercially available. These parameters are used in the scalable loss models to estimate power losses. The performance projection and scalable loss model are established based on data from Cree's product datasheets. The loss breakdown analysis of a SiC DC-DC boost converter is presented to demonstrate the proposed performance projection method and scalable loss model.
—In this paper, the static and switching characterizations of a SiC MOSFET's body diode are prese... more —In this paper, the static and switching characterizations of a SiC MOSFET's body diode are presented. The static characterization of SiC MOSFET's body diode is carried out using a curve tracer and a double pulse test bench is built to characterize the inductive switching behavior of SiC MOSFET's body diode. The reverse recovery of SiC MOSFET's body diode is shown at different forward conduction currents, junction temperatures and current commutation slopes. In order to evaluate the performance of SiC MOSFET's body diode in different applications, an accurate physics-based diode model is introduced to perform simulations of SiC MOSFET's body diode. The parameter extraction procedure for this body diode model is given. The validation of the body diode model shows good agreement between simulation and experimental results, which proves the accuracy of the model.
—In this paper, a simple and accurate analytical loss model for Silicon Carbide (SiC) power devic... more —In this paper, a simple and accurate analytical loss model for Silicon Carbide (SiC) power devices is proposed. A novel feature of this loss model is that it considers the package and PCB parasitic elements in the circuits, nonlinearity of device junction capacitance and ringing loss. The proposed model identifies the switching waveform subintervals, and develops the analytical equations in each switching subinterval to calculate the switching loss. Inductive turn-on and turn-off are thoroughly analyzed. A double pulse test-bench is built to characterize inductive switching behavior of the SiC devices. The analytical results are compared with experimental results. The results show that the proposed loss model can predict switching loss more accurately than the conventional loss model.
Compact models of wide-bandgap power devices are necessary to analyze and evaluate their impact ... more Compact models of wide-bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Part I reviewed compact models for silicon carbide (SiC) power diodes and MOSFETs. Part II completes the review of SiC devices and covers gallium nitride devices as well. Index Terms— Gallium nitride (GaN), modeling, power device modeling, power semiconductor devices, silicon carbide (SiC), wide-bandgap.
Wide bandgap power devices have emerged as an
often superior alternative power switch technology ... more Wide bandgap power devices have emerged as an often superior alternative power switch technology for many power electronic applications. These devices theoretically have excellent material properties enabling power device operation at higher switching frequencies and higher temperatures compared with conventional silicon devices. However, material defects can dominate device behavior, particularly over time, and this should be strongly considered when trying to model actual characteristics of currently available devices. Compact models of wide bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Available compact models, i.e., models compatible with circuit level simulators, are reviewed. In particular, this paper presents a review of compact models for silicon carbide power diodes and MOSFETs.
Silicon Carbide (SiC) power semiconductor devices
are expected to achieve better performance than... more Silicon Carbide (SiC) power semiconductor devices are expected to achieve better performance than silicon power devices in high-switching-frequency, high-power and hightemperature applications. Several commercial SiC MOSFETs and SiC Schottky diodes are available on the market, and SiC power devices with higher power ratings are expected in the future. This paper presents a performance projection method and a scalable loss model for both SiC MOSFETs and SiC Schottky diodes. The performance projection method provides estimated parameters also for upcoming devices with higher power ratings than currently commercially available. These parameters are used in the scalable loss models to estimate power losses. The performance projection and scalable loss model are established based on data from Cree抯 product datasheets. The loss breakdown analysis of a SiC DC-DC boost converter is presented to demonstrate the proposed performance projection method and scalable loss model.
In this paper, the static and switching
characterizations of a SiC MOSFET’s body diode are presen... more In this paper, the static and switching characterizations of a SiC MOSFET’s body diode are presented. The static characterization of SiC MOSFET’s body diode is carried out using a curve tracer and a double pulse test bench is built to characterize the inductive switching behavior of SiC MOSFET’s body diode. The reverse recovery of SiC MOSFET’s body diode is shown at different forward conduction currents, junction temperatures and current commutation slopes. In order to evaluate the performance of SiC MOSFET’s body diode in different applications, an accurate physics-based diode model is introduced to perform simulations of SiC MOSFET’s body diode. The parameter extraction procedure for this body diode model is given. The validation of the body diode model shows good agreement between simulation and experimental results, which proves the accuracy of the model.
In this paper, a simple and accurate analytical loss
model for Silicon Carbide (SiC) power device... more In this paper, a simple and accurate analytical loss model for Silicon Carbide (SiC) power devices is proposed. A novel feature of this loss model is that it considers the package and PCB parasitic elements in the circuits, nonlinearity of device junction capacitance and ringing loss. The proposed model identifies the switching waveform subintervals, and develops the analytical equations in each switching subinterval to calculate the switching loss. Inductive turn-on and turn-off are thoroughly analyzed. A double pulse test-bench is built to characterize inductive switching behavior of the SiC devices. The analytical results are compared with experimental results. The results show that the proposed loss model can predict switching loss more accurately than the conventional loss model.
Compact models of wide-bandgap power devices are
necessary to analyze and evaluate their impact o... more Compact models of wide-bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Part I reviewed compact models for silicon carbide (SiC) power diodes and MOSFETs. Part II completes the review of SiC devices and covers gallium nitride devices as well.
—In this paper, a simple and accurate circuit-simulator compact model for gallium nitride (GaN) h... more —In this paper, a simple and accurate circuit-simulator compact model for gallium nitride (GaN) high electron mobility transistor is proposed and validated under both static and switching conditions. A novel feature of this model is that it is valid also in the third quadrant, which is important when the device operates as a freewheeling diode. The only measurements required for the parameter extraction are simple I–V static characteristics and C–V characteristics. A detailed parameter extraction procedure is presented. Furthermore, a double-pulse test-bench is built to characterize the resistive and inductive switching behavior of the GaN device. A simulation model is built in Pspice software tool, considering the parasitic elements associated with the printed circuit board interconnections and other test-bench components (load resistor, load inductor, and current shunt monitor). The Pspice simulation results are compared with experimental results. The comparison shows good agreement between simulation and experimental results under both resistive and inductive switching conditions. Operation in the third quadrant under inductive switching is also validated.
— Wide bandgap power devices have emerged as an often superior alternative power switch technolog... more — Wide bandgap power devices have emerged as an often superior alternative power switch technology for many power electronic applications. These devices theoretically have excellent material properties enabling power device operation at higher switching frequencies and higher temperatures compared with conventional silicon devices. However, material defects can dominate device behavior, particularly over time, and this should be strongly considered when trying to model actual characteristics of currently available devices. Compact models of wide bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Available compact models, i.e., models compatible with circuit-level simulators, are reviewed. In particular, this paper presents a review of compact models for silicon carbide power diodes and MOSFETs. Index Terms— Gallium-nitride (GaN), modeling, power device modeling, power semiconductor devices, silicon-carbide (SiC), wide bandgap.
—Silicon Carbide (SiC) power semiconductor devices are expected to achieve better performance tha... more —Silicon Carbide (SiC) power semiconductor devices are expected to achieve better performance than silicon power devices in high-switching-frequency, high-power and high-temperature applications. Several commercial SiC MOSFETs and SiC Schottky diodes are available on the market, and SiC power devices with higher power ratings are expected in the future. This paper presents a performance projection method and a scalable loss model for both SiC MOSFETs and SiC Schottky diodes. The performance projection method provides estimated parameters also for upcoming devices with higher power ratings than currently commercially available. These parameters are used in the scalable loss models to estimate power losses. The performance projection and scalable loss model are established based on data from Cree's product datasheets. The loss breakdown analysis of a SiC DC-DC boost converter is presented to demonstrate the proposed performance projection method and scalable loss model.
—In this paper, the static and switching characterizations of a SiC MOSFET's body diode are prese... more —In this paper, the static and switching characterizations of a SiC MOSFET's body diode are presented. The static characterization of SiC MOSFET's body diode is carried out using a curve tracer and a double pulse test bench is built to characterize the inductive switching behavior of SiC MOSFET's body diode. The reverse recovery of SiC MOSFET's body diode is shown at different forward conduction currents, junction temperatures and current commutation slopes. In order to evaluate the performance of SiC MOSFET's body diode in different applications, an accurate physics-based diode model is introduced to perform simulations of SiC MOSFET's body diode. The parameter extraction procedure for this body diode model is given. The validation of the body diode model shows good agreement between simulation and experimental results, which proves the accuracy of the model.
—In this paper, a simple and accurate analytical loss model for Silicon Carbide (SiC) power devic... more —In this paper, a simple and accurate analytical loss model for Silicon Carbide (SiC) power devices is proposed. A novel feature of this loss model is that it considers the package and PCB parasitic elements in the circuits, nonlinearity of device junction capacitance and ringing loss. The proposed model identifies the switching waveform subintervals, and develops the analytical equations in each switching subinterval to calculate the switching loss. Inductive turn-on and turn-off are thoroughly analyzed. A double pulse test-bench is built to characterize inductive switching behavior of the SiC devices. The analytical results are compared with experimental results. The results show that the proposed loss model can predict switching loss more accurately than the conventional loss model.
Compact models of wide-bandgap power devices are necessary to analyze and evaluate their impact ... more Compact models of wide-bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Part I reviewed compact models for silicon carbide (SiC) power diodes and MOSFETs. Part II completes the review of SiC devices and covers gallium nitride devices as well. Index Terms— Gallium nitride (GaN), modeling, power device modeling, power semiconductor devices, silicon carbide (SiC), wide-bandgap.
Wide bandgap power devices have emerged as an
often superior alternative power switch technology ... more Wide bandgap power devices have emerged as an often superior alternative power switch technology for many power electronic applications. These devices theoretically have excellent material properties enabling power device operation at higher switching frequencies and higher temperatures compared with conventional silicon devices. However, material defects can dominate device behavior, particularly over time, and this should be strongly considered when trying to model actual characteristics of currently available devices. Compact models of wide bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Available compact models, i.e., models compatible with circuit level simulators, are reviewed. In particular, this paper presents a review of compact models for silicon carbide power diodes and MOSFETs.
Silicon Carbide (SiC) power semiconductor devices
are expected to achieve better performance than... more Silicon Carbide (SiC) power semiconductor devices are expected to achieve better performance than silicon power devices in high-switching-frequency, high-power and hightemperature applications. Several commercial SiC MOSFETs and SiC Schottky diodes are available on the market, and SiC power devices with higher power ratings are expected in the future. This paper presents a performance projection method and a scalable loss model for both SiC MOSFETs and SiC Schottky diodes. The performance projection method provides estimated parameters also for upcoming devices with higher power ratings than currently commercially available. These parameters are used in the scalable loss models to estimate power losses. The performance projection and scalable loss model are established based on data from Cree抯 product datasheets. The loss breakdown analysis of a SiC DC-DC boost converter is presented to demonstrate the proposed performance projection method and scalable loss model.
In this paper, the static and switching
characterizations of a SiC MOSFET’s body diode are presen... more In this paper, the static and switching characterizations of a SiC MOSFET’s body diode are presented. The static characterization of SiC MOSFET’s body diode is carried out using a curve tracer and a double pulse test bench is built to characterize the inductive switching behavior of SiC MOSFET’s body diode. The reverse recovery of SiC MOSFET’s body diode is shown at different forward conduction currents, junction temperatures and current commutation slopes. In order to evaluate the performance of SiC MOSFET’s body diode in different applications, an accurate physics-based diode model is introduced to perform simulations of SiC MOSFET’s body diode. The parameter extraction procedure for this body diode model is given. The validation of the body diode model shows good agreement between simulation and experimental results, which proves the accuracy of the model.
In this paper, a simple and accurate analytical loss
model for Silicon Carbide (SiC) power device... more In this paper, a simple and accurate analytical loss model for Silicon Carbide (SiC) power devices is proposed. A novel feature of this loss model is that it considers the package and PCB parasitic elements in the circuits, nonlinearity of device junction capacitance and ringing loss. The proposed model identifies the switching waveform subintervals, and develops the analytical equations in each switching subinterval to calculate the switching loss. Inductive turn-on and turn-off are thoroughly analyzed. A double pulse test-bench is built to characterize inductive switching behavior of the SiC devices. The analytical results are compared with experimental results. The results show that the proposed loss model can predict switching loss more accurately than the conventional loss model.
Compact models of wide-bandgap power devices are
necessary to analyze and evaluate their impact o... more Compact models of wide-bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Part I reviewed compact models for silicon carbide (SiC) power diodes and MOSFETs. Part II completes the review of SiC devices and covers gallium nitride devices as well.
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Papers by Peng Kang
often superior alternative power switch technology for many
power electronic applications. These devices theoretically have
excellent material properties enabling power device operation at
higher switching frequencies and higher temperatures compared
with conventional silicon devices. However, material defects
can dominate device behavior, particularly over time, and this
should be strongly considered when trying to model actual
characteristics of currently available devices. Compact models
of wide bandgap power devices are necessary to analyze and
evaluate their impact on circuit and system performance.
Available compact models, i.e., models compatible with circuit level
simulators, are reviewed. In particular, this paper presents
a review of compact models for silicon carbide power diodes and
MOSFETs.
are expected to achieve better performance than silicon power
devices in high-switching-frequency, high-power and hightemperature
applications. Several commercial SiC MOSFETs
and SiC Schottky diodes are available on the market, and SiC
power devices with higher power ratings are expected in the
future. This paper presents a performance projection method
and a scalable loss model for both SiC MOSFETs and SiC
Schottky diodes. The performance projection method provides
estimated parameters also for upcoming devices with higher
power ratings than currently commercially available. These
parameters are used in the scalable loss models to estimate power
losses. The performance projection and scalable loss model are
established based on data from Cree抯 product datasheets. The
loss breakdown analysis of a SiC DC-DC boost converter is
presented to demonstrate the proposed performance projection
method and scalable loss model.
characterizations of a SiC MOSFET’s body diode are presented.
The static characterization of SiC MOSFET’s body diode is
carried out using a curve tracer and a double pulse test bench is
built to characterize the inductive switching behavior of SiC
MOSFET’s body diode. The reverse recovery of SiC MOSFET’s
body diode is shown at different forward conduction currents,
junction temperatures and current commutation slopes. In order
to evaluate the performance of SiC MOSFET’s body diode in
different applications, an accurate physics-based diode model is
introduced to perform simulations of SiC MOSFET’s body
diode. The parameter extraction procedure for this body diode
model is given. The validation of the body diode model shows
good agreement between simulation and experimental results,
which proves the accuracy of the model.
model for Silicon Carbide (SiC) power devices is proposed. A
novel feature of this loss model is that it considers the package
and PCB parasitic elements in the circuits, nonlinearity of device
junction capacitance and ringing loss. The proposed model
identifies the switching waveform subintervals, and develops the
analytical equations in each switching subinterval to calculate the
switching loss. Inductive turn-on and turn-off are thoroughly
analyzed. A double pulse test-bench is built to characterize
inductive switching behavior of the SiC devices. The analytical
results are compared with experimental results. The results show
that the proposed loss model can predict switching loss more
accurately than the conventional loss model.
necessary to analyze and evaluate their impact on circuit and
system performance. Part I reviewed compact models for silicon
carbide (SiC) power diodes and MOSFETs. Part II completes
the review of SiC devices and covers gallium nitride devices as
well.
often superior alternative power switch technology for many
power electronic applications. These devices theoretically have
excellent material properties enabling power device operation at
higher switching frequencies and higher temperatures compared
with conventional silicon devices. However, material defects
can dominate device behavior, particularly over time, and this
should be strongly considered when trying to model actual
characteristics of currently available devices. Compact models
of wide bandgap power devices are necessary to analyze and
evaluate their impact on circuit and system performance.
Available compact models, i.e., models compatible with circuit level
simulators, are reviewed. In particular, this paper presents
a review of compact models for silicon carbide power diodes and
MOSFETs.
are expected to achieve better performance than silicon power
devices in high-switching-frequency, high-power and hightemperature
applications. Several commercial SiC MOSFETs
and SiC Schottky diodes are available on the market, and SiC
power devices with higher power ratings are expected in the
future. This paper presents a performance projection method
and a scalable loss model for both SiC MOSFETs and SiC
Schottky diodes. The performance projection method provides
estimated parameters also for upcoming devices with higher
power ratings than currently commercially available. These
parameters are used in the scalable loss models to estimate power
losses. The performance projection and scalable loss model are
established based on data from Cree抯 product datasheets. The
loss breakdown analysis of a SiC DC-DC boost converter is
presented to demonstrate the proposed performance projection
method and scalable loss model.
characterizations of a SiC MOSFET’s body diode are presented.
The static characterization of SiC MOSFET’s body diode is
carried out using a curve tracer and a double pulse test bench is
built to characterize the inductive switching behavior of SiC
MOSFET’s body diode. The reverse recovery of SiC MOSFET’s
body diode is shown at different forward conduction currents,
junction temperatures and current commutation slopes. In order
to evaluate the performance of SiC MOSFET’s body diode in
different applications, an accurate physics-based diode model is
introduced to perform simulations of SiC MOSFET’s body
diode. The parameter extraction procedure for this body diode
model is given. The validation of the body diode model shows
good agreement between simulation and experimental results,
which proves the accuracy of the model.
model for Silicon Carbide (SiC) power devices is proposed. A
novel feature of this loss model is that it considers the package
and PCB parasitic elements in the circuits, nonlinearity of device
junction capacitance and ringing loss. The proposed model
identifies the switching waveform subintervals, and develops the
analytical equations in each switching subinterval to calculate the
switching loss. Inductive turn-on and turn-off are thoroughly
analyzed. A double pulse test-bench is built to characterize
inductive switching behavior of the SiC devices. The analytical
results are compared with experimental results. The results show
that the proposed loss model can predict switching loss more
accurately than the conventional loss model.
necessary to analyze and evaluate their impact on circuit and
system performance. Part I reviewed compact models for silicon
carbide (SiC) power diodes and MOSFETs. Part II completes
the review of SiC devices and covers gallium nitride devices as
well.