X-ray analytical methods with high angular resolution are becoming increasingly important for the... more X-ray analytical methods with high angular resolution are becoming increasingly important for the characterization of materials used in ULSI fabrication. Vendors now market state-of-the-art X-ray tools for the routine analysis of parameters such as layer thickness, chemical composition, strain relaxation, and interfacial roughness. The recent integration of X-ray diffraction and reflectivity systems into fab-compatible process metrology tools suggests that the importance of these techniques will only increase with time. Here we discuss some basic principles of high resolution X-ray methods (notably double-and triple-axis X-ray diffractometry and high resolution X-ray reflectometry) and will describe the capabilities and limitations of these tools for ULSI materials. Reference will be made to "real-life" problems involving bulk and thin-film structures (ranging from amorphous dielectrics and polycrystalline metals to highly perfect epitaxial single crystal materials) to show both the utility and the shortcomings of high resolution X-ray methods.
Journal of Photopolymer Science and Technology, 2008
Base titration methods are used to determine C-parameters for twenty EUV photoresist platforms. X... more Base titration methods are used to determine C-parameters for twenty EUV photoresist platforms. X-ray reflectometry is used to measure the density of these resists, and leads to the determination of absorbance and film quantum yields (FQY). Ultrahigh levels of Photoacid Generator (PAG) show divergent mechanisms for production of photoacids beyond PAG concentrations of 0.35 moles/liter. The FQY of sulfonium PAGs level off, whereas resists prepared with iodonium PAG show FQYs that increase beyond PAG concentrations of 0.35 moles/liter, reaching record highs of 8-13 acids generated/EUV photons absorbed.
The interface roughness of a GaAs/AlGaAs/InGaAs double-barrier-quantum-well structure was control... more The interface roughness of a GaAs/AlGaAs/InGaAs double-barrier-quantum-well structure was controllably altered by changing substrate surface misorientation and growth interruption time at metal organic vapor-phase epitaxy (MOVPE) growth interfaces. Atomic force microscopy (AFM) and X-ray reflectance measurements were used to quantify the interface roughness. The InGaAs quantum wells grown on singular substrates exhibit an island growth mode morphology, while step-bunched growth is observed on the misoriented substrates. A short growth interruption time, of typically &15 s, can decrease the InGaAs/AlGaAs interface roughness. The low-temperature I-» characteristics of the resonant tunneling diodes based on this quantum-well structure are found to be sensitive to the quantum-well interface roughness. The measured interfacial roughness was used as input to a numerical simulation of device performance.
IEEE Transactions on Instrumentation and Measurement, 2005
A determination of the Avogadro constant from two selected silicon single-crystals with natural i... more A determination of the Avogadro constant from two selected silicon single-crystals with natural isotopic compositions is described. The density, molar mass, and lattice spacing of the two crystals were measured at NMIJ, PTB, IRMM, IMGC, and NIST. When all the data are combined, they lead to a value of the Avogadro constant of 6.022 1353 (18) 10 23 mol 1 with a relative combined standard uncertainty of 3.1 10 7 .
... It consisted of a string of Si CMOS inverters and a string of GaAs BFL inverters connected to... more ... It consisted of a string of Si CMOS inverters and a string of GaAs BFL inverters connected together to form a ring oscillator. ... 8(b)) consisted of 35 Si CMOS inverters, ten GaAs ,, MgSFET BFL inverters, one CM ~ S - ~ ~ - BFL interface Fig. ...
X-ray analytical methods with high angular resolution are becoming increasingly important for the... more X-ray analytical methods with high angular resolution are becoming increasingly important for the characterization of materials used in ULSI fabrication. Vendors now market state-of-the-art X-ray tools for the routine analysis of parameters such as layer thickness, chemical composition, strain relaxation, and interfacial roughness. The recent integration of X-ray diffraction and reflectivity systems into fab-compatible process metrology tools suggests that the importance of these techniques will only increase with time. Here we discuss some basic principles of high resolution X-ray methods (notably double-and triple-axis X-ray diffractometry and high resolution X-ray reflectometry) and will describe the capabilities and limitations of these tools for ULSI materials. Reference will be made to "real-life" problems involving bulk and thin-film structures (ranging from amorphous dielectrics and polycrystalline metals to highly perfect epitaxial single crystal materials) to show both the utility and the shortcomings of high resolution X-ray methods.
Journal of Photopolymer Science and Technology, 2008
Base titration methods are used to determine C-parameters for twenty EUV photoresist platforms. X... more Base titration methods are used to determine C-parameters for twenty EUV photoresist platforms. X-ray reflectometry is used to measure the density of these resists, and leads to the determination of absorbance and film quantum yields (FQY). Ultrahigh levels of Photoacid Generator (PAG) show divergent mechanisms for production of photoacids beyond PAG concentrations of 0.35 moles/liter. The FQY of sulfonium PAGs level off, whereas resists prepared with iodonium PAG show FQYs that increase beyond PAG concentrations of 0.35 moles/liter, reaching record highs of 8-13 acids generated/EUV photons absorbed.
The interface roughness of a GaAs/AlGaAs/InGaAs double-barrier-quantum-well structure was control... more The interface roughness of a GaAs/AlGaAs/InGaAs double-barrier-quantum-well structure was controllably altered by changing substrate surface misorientation and growth interruption time at metal organic vapor-phase epitaxy (MOVPE) growth interfaces. Atomic force microscopy (AFM) and X-ray reflectance measurements were used to quantify the interface roughness. The InGaAs quantum wells grown on singular substrates exhibit an island growth mode morphology, while step-bunched growth is observed on the misoriented substrates. A short growth interruption time, of typically &15 s, can decrease the InGaAs/AlGaAs interface roughness. The low-temperature I-» characteristics of the resonant tunneling diodes based on this quantum-well structure are found to be sensitive to the quantum-well interface roughness. The measured interfacial roughness was used as input to a numerical simulation of device performance.
IEEE Transactions on Instrumentation and Measurement, 2005
A determination of the Avogadro constant from two selected silicon single-crystals with natural i... more A determination of the Avogadro constant from two selected silicon single-crystals with natural isotopic compositions is described. The density, molar mass, and lattice spacing of the two crystals were measured at NMIJ, PTB, IRMM, IMGC, and NIST. When all the data are combined, they lead to a value of the Avogadro constant of 6.022 1353 (18) 10 23 mol 1 with a relative combined standard uncertainty of 3.1 10 7 .
... It consisted of a string of Si CMOS inverters and a string of GaAs BFL inverters connected to... more ... It consisted of a string of Si CMOS inverters and a string of GaAs BFL inverters connected together to form a ring oscillator. ... 8(b)) consisted of 35 Si CMOS inverters, ten GaAs ,, MgSFET BFL inverters, one CM ~ S - ~ ~ - BFL interface Fig. ...
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