The effect of electric fields on the magnetoresist,ance of intermediately doped crystals (4 x 101... more The effect of electric fields on the magnetoresist,ance of intermediately doped crystals (4 x 1016 5 of n-type epitaxial gallium arsenide a t T = 4.2 K is studied. It is established that negative magnetoresist,ance is observed only in weak electric fields. Positive magnetoresistance is observed in an electric field higher than the impurity breakdown field. A transition from negative magnetoresistance to positire magnet,oresistance is found to occur in an electric field less t,han the breakdown field. A model is suggested to explain magnetoresistance changes in electric fields, which takes into account the decrease of the negative component of magnetoresistance due t o a decrease in the concentration of magnetic centres and the increase of the positive component due to the appearance of rionequilibrium carriers i m the conduction band. n, 3 x 1016 M[Cc3eZORaHO RJIHFIHHe 3JIeKTPHYeCKOTO n0JIR Ha XlarHHTOCOIIPOTI?BJIeHL3e IIpOMeXJ'TO~fHO JIerllPODaHlIbIX KpMCTaJI3OR (4 X loi5 5 n, 5 3 X cIK3) 3IIMTaKCHaJIbHOTO apce-HLI!Ia raJlJIJTFI n-Tnna IIPM T = 4,2 K. ~CTaHORJIeHO, 'IT0 OTpH4aTeJIJ~IIOe MarHMTO-IIOJIe, 6OJIbIIIeM I 1 0 3 R IIpHMeCHOrO IIpo603€, 4 I a T H H T O C O I I P O T I I R~e I €~e IIOJIOWMTeJI6HO. 0 6-HapyXeHo, cITO IIepeXofl OT OTpMUaTenbHOro JIarHHTOCOIIPOTHRnIeH~FI K IIOJIOXllTeJIb-ZnFi 06XRCHeHHX H3hleEIeHMFI I\.laTHRTOCOIIPOTMHneHHFi B 3JIeKTpHYeCKOM none, YqkfTbI-BalOIUaR yMeHLlUeHHe OTpEfLIaTeJILHOiI KOMIIOHeHThI ~I~~H I I T O C O I I~O T H H J~i I M F I BCJrel[CTBLle yMeHbIIIeHHFI KoiIUeHT1laqI4H MaTHLlTHbIX UeHTpOB If yReJIHcIeHHe IIOJIOXMTeJILHOii 113-3a IIORBJIeHHR IIcpaB€€oBeCHbIX HOCMTCJIeii 3aPFIZa R 30He IIpOBoHHMVcTtI.
The effect of electric fields on the magnetoresist,ance of intermediately doped crystals (4 x 101... more The effect of electric fields on the magnetoresist,ance of intermediately doped crystals (4 x 1016 5 of n-type epitaxial gallium arsenide a t T = 4.2 K is studied. It is established that negative magnetoresist,ance is observed only in weak electric fields. Positive magnetoresistance is observed in an electric field higher than the impurity breakdown field. A transition from negative magnetoresistance to positire magnet,oresistance is found to occur in an electric field less t,han the breakdown field. A model is suggested to explain magnetoresistance changes in electric fields, which takes into account the decrease of the negative component of magnetoresistance due t o a decrease in the concentration of magnetic centres and the increase of the positive component due to the appearance of rionequilibrium carriers i m the conduction band. n, 3 x 1016 M[Cc3eZORaHO RJIHFIHHe 3JIeKTPHYeCKOTO n0JIR Ha XlarHHTOCOIIPOTI?BJIeHL3e IIpOMeXJ'TO~fHO JIerllPODaHlIbIX KpMCTaJI3OR (4 X loi5 5 n, 5 3 X cIK3) 3IIMTaKCHaJIbHOTO apce-HLI!Ia raJlJIJTFI n-Tnna IIPM T = 4,2 K. ~CTaHORJIeHO, 'IT0 OTpH4aTeJIJ~IIOe MarHMTO-IIOJIe, 6OJIbIIIeM I 1 0 3 R IIpHMeCHOrO IIpo603€, 4 I a T H H T O C O I I P O T I I R~e I €~e IIOJIOWMTeJI6HO. 0 6-HapyXeHo, cITO IIepeXofl OT OTpMUaTenbHOro JIarHHTOCOIIPOTHRnIeH~FI K IIOJIOXllTeJIb-ZnFi 06XRCHeHHX H3hleEIeHMFI I\.laTHRTOCOIIPOTMHneHHFi B 3JIeKTpHYeCKOM none, YqkfTbI-BalOIUaR yMeHLlUeHHe OTpEfLIaTeJILHOiI KOMIIOHeHThI ~I~~H I I T O C O I I~O T H H J~i I M F I BCJrel[CTBLle yMeHbIIIeHHFI KoiIUeHT1laqI4H MaTHLlTHbIX UeHTpOB If yReJIHcIeHHe IIOJIOXMTeJILHOii 113-3a IIORBJIeHHR IIcpaB€€oBeCHbIX HOCMTCJIeii 3aPFIZa R 30He IIpOBoHHMVcTtI.
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