Copper (I) iodide (CuI), a p-type wide band gap (~3.1 eV) transparent semiconductor is a potentia... more Copper (I) iodide (CuI), a p-type wide band gap (~3.1 eV) transparent semiconductor is a potential candidate for a range of applications in optoelectronics. Polycrystalline p-CuI thin films were prepared on glass substrate by solution processing at low temperature. The CuI films were doped with iodine vapor and with KSCN to achieve a high conductivity. Their electrical and optical properties were characterized by current-voltage measurements and UV–visible spectroscopy. The surface morphology of the films was also characterized by scanning electron microscopy. Financial support from UWG SEEP and SRAP programs are acknowledged
Physica Status Solidi A-applications and Materials Science, Oct 17, 2017
It is found that thiocyanate (SCN) is an alternative dopant that greatly stabilizes the p-type se... more It is found that thiocyanate (SCN) is an alternative dopant that greatly stabilizes the p-type semiconducting properties of CuI. Thiocyanate doping can be achieved by a complete removal of the excess iodine and introduction of thiocyanate via suitable precursors at ambient temperature. A method of removal of iodine from CuI before casting films is described. The electrical and optical properties of thiocyanate-doped CuI thin films are also discussed.
Copper (I) Iodide is a p-type semiconductor of band gap of ~ 3.1 eV. The high hole mobility, good... more Copper (I) Iodide is a p-type semiconductor of band gap of ~ 3.1 eV. The high hole mobility, good optical transparency and ease of fabricating thin films makes it a rare example of a solution processable transparent hole conductor. The properties of CuI depend on presence of iodine in stoichiometric excess, when iodine acts as an electron acceptor generating holes in the valence band. All samples of CuI including freshly prepared contain excess iodine due oxidation. A method is described for elimination excess iodine CuI so that doping could be controlled to conduct accurate measurements of carrier concentration, mobilities and optical properties
It is found that thiocyanate (SCN) is an alternative dopant that greatly stabilizes the p-type se... more It is found that thiocyanate (SCN) is an alternative dopant that greatly stabilizes the p-type semiconducting properties of CuI. Thiocyanate doping can be achieved by a complete removal of the excess iodine and introduction of thiocyanate via suitable precursors at ambient temperature. A method of removal of iodine from CuI before casting films is described. The electrical and optical properties of thiocyanate-doped CuI thin films are also discussed.
Copper (I) iodide (CuI), a p-type wide band gap (~3.1 eV) transparent semiconductor is a potentia... more Copper (I) iodide (CuI), a p-type wide band gap (~3.1 eV) transparent semiconductor is a potential candidate for a range of applications in optoelectronics. Polycrystalline p-CuI thin films were prepared on glass substrate by solution processing at low temperature. The CuI films were doped with iodine vapor and with KSCN to achieve a high conductivity. Their electrical and optical properties were characterized by current-voltage measurements and UV–visible spectroscopy. The surface morphology of the films was also characterized by scanning electron microscopy. Financial support from UWG SEEP and SRAP programs are acknowledged
Copper (I) iodide (CuI), a p-type wide band gap (~3.1 eV) transparent semiconductor is a potentia... more Copper (I) iodide (CuI), a p-type wide band gap (~3.1 eV) transparent semiconductor is a potential candidate for a range of applications in optoelectronics. Polycrystalline p-CuI thin films were prepared on glass substrate by solution processing at low temperature. The CuI films were doped with iodine vapor and with KSCN to achieve a high conductivity. Their electrical and optical properties were characterized by current-voltage measurements and UV–visible spectroscopy. The surface morphology of the films was also characterized by scanning electron microscopy. Financial support from UWG SEEP and SRAP programs are acknowledged
Physica Status Solidi A-applications and Materials Science, Oct 17, 2017
It is found that thiocyanate (SCN) is an alternative dopant that greatly stabilizes the p-type se... more It is found that thiocyanate (SCN) is an alternative dopant that greatly stabilizes the p-type semiconducting properties of CuI. Thiocyanate doping can be achieved by a complete removal of the excess iodine and introduction of thiocyanate via suitable precursors at ambient temperature. A method of removal of iodine from CuI before casting films is described. The electrical and optical properties of thiocyanate-doped CuI thin films are also discussed.
Copper (I) Iodide is a p-type semiconductor of band gap of ~ 3.1 eV. The high hole mobility, good... more Copper (I) Iodide is a p-type semiconductor of band gap of ~ 3.1 eV. The high hole mobility, good optical transparency and ease of fabricating thin films makes it a rare example of a solution processable transparent hole conductor. The properties of CuI depend on presence of iodine in stoichiometric excess, when iodine acts as an electron acceptor generating holes in the valence band. All samples of CuI including freshly prepared contain excess iodine due oxidation. A method is described for elimination excess iodine CuI so that doping could be controlled to conduct accurate measurements of carrier concentration, mobilities and optical properties
It is found that thiocyanate (SCN) is an alternative dopant that greatly stabilizes the p-type se... more It is found that thiocyanate (SCN) is an alternative dopant that greatly stabilizes the p-type semiconducting properties of CuI. Thiocyanate doping can be achieved by a complete removal of the excess iodine and introduction of thiocyanate via suitable precursors at ambient temperature. A method of removal of iodine from CuI before casting films is described. The electrical and optical properties of thiocyanate-doped CuI thin films are also discussed.
Copper (I) iodide (CuI), a p-type wide band gap (~3.1 eV) transparent semiconductor is a potentia... more Copper (I) iodide (CuI), a p-type wide band gap (~3.1 eV) transparent semiconductor is a potential candidate for a range of applications in optoelectronics. Polycrystalline p-CuI thin films were prepared on glass substrate by solution processing at low temperature. The CuI films were doped with iodine vapor and with KSCN to achieve a high conductivity. Their electrical and optical properties were characterized by current-voltage measurements and UV–visible spectroscopy. The surface morphology of the films was also characterized by scanning electron microscopy. Financial support from UWG SEEP and SRAP programs are acknowledged
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