Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002
The performance of chemically amplified photoresists is extremely sensitive to interfacial and su... more The performance of chemically amplified photoresists is extremely sensitive to interfacial and surface phenomena, which cause deviations in the pattern profile near an interface. Striking examples include T-topping or closure near the air/resist interface and footing or undercutting near the resist/substrate interface. One focus of our research is to identify mechanisms that cause lithographic patterns to deviate near interfaces. Near edge x-ray absorption fine structure (NEXAFS) is a powerful tool that can be developed and adapted to probe for detailed chemical information near lithographically relevant interfaces. NEXAFS showed that our model resist films exhibited significant surface segregation of the photo acid generator (PAG) at the air interface. The PAG surface mole fraction was 20–70 times greater than the bulk mole fraction and the amount of surface segregation was dependent on the polarity of the polymer. NEXAFS also revealed that the PAG surface fraction was reduced afte...
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Papers by Daniel Fischer