This article is an open access article distributed under the terms and conditions of the Creative... more This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY
Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or ... more Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780–1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The laser structures were grown using the molecular beam epitaxy (MBE) technique on the n-type GaAs(100) substrate. The photolithography process was performed to fabricate edge-emitting laser bars of 5 μm by 500 μm in size. The temperature-dependent power-current measurements showed that the characteristic threshold current of the fabricated LDs was in the 60–120 mA range. Light and current characteristics were almost linear up to (1.2–2.0) Ith. Low-frequency 10 Hz–20 kHz electrical and optical noise characteristics were measured in the temperature range from 70 K to 290 K and showed that the low-frequency optical and electrical noise spectra are comprised of 1/f and Lorentzian-type components. The positive cros...
A series of 100 nm-thick pseudomorphic GaAsBi layers with the Bi content varying from 0.97 to 11.... more A series of 100 nm-thick pseudomorphic GaAsBi layers with the Bi content varying from 0.97 to 11.2% have been grown by molecular beam epitaxy (MBE) on the semi-insulating GaAs(100) substrates buffered with an ultra-thin up to 20 nm thick GaAs layer. The main attention in this work was focused on the investigation of relaxation in the Bi induced compressively-strained GaAsBi layers containing a various content of Bi. The lattice parameters of GaAs- Bi compound and the Bi concentration have been evaluated from high resolution X-ray diffraction measurements. The relaxation values of GaAsBi layers ranging from 0.4 to 3.5% were obtained analyzing the symmetric and asymmetric reciprocal space maps of (004) and (115) planes, respectively. Also, the complex study was performed to clarify the relaxation effect on structural, morphological and optical properties of bismide layers. Optical measurements revealed a significant reduction of the energy band gap from 1.34 to 0.92 eV for the layers ...
This article is an open access article distributed under the terms and conditions of the Creative... more This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY
Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or ... more Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780–1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The laser structures were grown using the molecular beam epitaxy (MBE) technique on the n-type GaAs(100) substrate. The photolithography process was performed to fabricate edge-emitting laser bars of 5 μm by 500 μm in size. The temperature-dependent power-current measurements showed that the characteristic threshold current of the fabricated LDs was in the 60–120 mA range. Light and current characteristics were almost linear up to (1.2–2.0) Ith. Low-frequency 10 Hz–20 kHz electrical and optical noise characteristics were measured in the temperature range from 70 K to 290 K and showed that the low-frequency optical and electrical noise spectra are comprised of 1/f and Lorentzian-type components. The positive cros...
A series of 100 nm-thick pseudomorphic GaAsBi layers with the Bi content varying from 0.97 to 11.... more A series of 100 nm-thick pseudomorphic GaAsBi layers with the Bi content varying from 0.97 to 11.2% have been grown by molecular beam epitaxy (MBE) on the semi-insulating GaAs(100) substrates buffered with an ultra-thin up to 20 nm thick GaAs layer. The main attention in this work was focused on the investigation of relaxation in the Bi induced compressively-strained GaAsBi layers containing a various content of Bi. The lattice parameters of GaAs- Bi compound and the Bi concentration have been evaluated from high resolution X-ray diffraction measurements. The relaxation values of GaAsBi layers ranging from 0.4 to 3.5% were obtained analyzing the symmetric and asymmetric reciprocal space maps of (004) and (115) planes, respectively. Also, the complex study was performed to clarify the relaxation effect on structural, morphological and optical properties of bismide layers. Optical measurements revealed a significant reduction of the energy band gap from 1.34 to 0.92 eV for the layers ...
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