Debanjan Jana

Chang Gung University, Electronic Engineering, Graduate Student

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Design and development of emerging NVM such as RRAM, CBRAM, PCRAM, MRAM, FeRAM and their process technology.
3D RRAM and 3D stackable crossbar memories for high density low power non-volatile data storage applications.
Phone: +886978629941
Address: Chang Gung University, Wen-Hwa 1st Road, Kwei-Shan, Taoyuan, Taiwan, 333

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ITRI

National Chiao Tung University

Dr. Pankaj Misra

Raja ramanna Centre for Advanced Technology

Jack Chen

National University of Sciences & Technology (NUST)

Ijaz Talib

Bahauddin Zakariya University

Achintya Dhar

IIT Kharagpur

Jakub Koza

Missouri University of Science and Technology

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Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure

The formation-polarity-dependent improved resistive switching memory performance using a new IrO ... more The formation-polarity-dependent improved resistive switching memory performance using a new IrO x /GdO x /WO x /W structure has been investigated. The memory device has been observed by both high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy. The thicknesses of the GdO x and WO x layers are observed to be approximately 15 and 5.5 nm, respectively. All layers are also analyzed by X-ray photoelectron spectroscopy. The resistive switching mechanism is filament formation/rupture in the high-GdO x layer, which is controlled by the oxygen ion migration in bilayer GdO x /WO x films under negative and positive formation polarities. Excellent uniformity of SET/ RESET voltages, low/high resistance states, and switching cycles have been observed under positive formation polarity owing to the charge trapping/detrapping in the high-GdO x switching layer. The memory device shows a long endurance of >10 4 times, and extrapolated 10-year data retention at 85 C. This device shows great potential for future nonvolatile memory (NVM) applications.

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TaOx-based resistive switching memories: prospective and challenges

Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the ... more Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaO x is one of the prospective switching materials because of two stable phases of TaO 2 and Ta 2 O 5 , which can also control the stable low-and high-resistance states. Long program/ erase endurance and data retention at high temperature under low-current operation are also reported in published literature. So far, bilayered TaO x with inert electrodes (Pt and/or Ir) or single layer TaO x with semi-reactive electrodes (W and Ti/W or Ta/Pt) is proposed for real RRAM applications. It is found that the memory characteristics at current compliance (CC) of 80 μA is acceptable for real application; however, data are becoming worst at CC of 10 μA. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study investigates the switching mode, mechanism, and performance of low-current operated TaO x -based devices as compared to other RRAM devices. This topical review will not only help for application of TaO x -based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production.

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Self-compliance RRAM characteristics using a novel W/TaOx/TiN structure

Self-compliance resistive random access memory (RRAM) characteristics using a W/TaO x /TiN struct... more Self-compliance resistive random access memory (RRAM) characteristics using a W/TaO x /TiN structure are reported for the first time. A high-resolution transmission electron microscope (HRTEM) image shows an amorphous TaO x layer with a thickness of 7 nm. A thin layer of TiO x N y with a thickness of 3 nm is formed at the TaO x /TiN interface, owing to the oxygen accumulation nature of Ti. This memory device shows 100 consecutive switching cycles with excellent uniformity, 100 randomly picked device-to-device good uniformity, and program/erase endurance of >10 3 cycles. It is observed that the 0.6-μm devices show better switching uniformity as compared to the 4-μm devices, which is due to the thinner tungsten (W) electrode as well as higher series resistance. The oxygen-rich TaO x layer at the W/TaO x interface also plays an important role in getting self-compliance resistive switching phenomena and non-linear current-voltage (I-V) curve at low resistance state (LRS). Switching mechanism is attributed to the formation and rupture of oxygen vacancy conducting path in the TaO x switching material. The memory device also exhibits long read endurance of >10 6 cycles. It is found that after 400,000 cycles, the high resistance state (HRS) is decreased, which may be due to some defects creation (or oxygen moves away) by frequent stress on the switching material. Good data retention of >10 4 s is also obtained.

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Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/ W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance Ir Ox/Gd Ox/W cross-point memories

Enhanced resistive switching phenomena of IrO x /GdO x /W cross-point memory devices have been ob... more Enhanced resistive switching phenomena of IrO x /GdO x /W cross-point memory devices have been observed as compared to the via-hole devices. The as-deposited Gd 2 O 3 films with a thickness of approximately 15 nm show polycrystalline that is observed using high-resolution transmission electron microscope. Via-hole memory device shows bipolar resistive switching phenomena with a large formation voltage of −6.4 V and high operation current of >1 mA, while the cross-point memory device shows also bipolar resistive switching with low-voltage format of +2 V and self-compliance operation current of <300 μA. Switching mechanism is based on the formation and rupture of conducting filament at the IrO x /GdO x interface, owing to oxygen ion migration. The oxygen-rich GdO x layer formation at the IrO x /GdO x interface will also help control the resistive switching characteristics. This cross-point memory device has also Repeatable 100 DC switching cycles, narrow distribution of LRS/HRS, excellent pulse endurance of >10,000 in every cycle, and good data retention of >10 4 s. This memory device has great potential for future nanoscale high-density non-volatile memory applications.

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Self-compliance-improved resistive switching using Ir/TaO x /W cross-point memory

Resistive switching properties of a self-compliance resistive random access memory device in cros... more Resistive switching properties of a self-compliance resistive random access memory device in cross-point architecture with a simple stack structure of Ir/TaO x /W have been investigated. A transmission electron microscope and atomic force microscope were used to observe the film properties and morphology of the stack. The device has shown excellent switching cycle uniformity with a small operation of ±2.5 V and a resistance ratio of >100. The device requires neither any frorming-process nor current compliance limit for repeatable operation in contrast to conventional resistive random access memory devices. The effect of bottom electrode morphology and surface roughness is also studied. The improvement is due to the enhanced electric field at the nanotips in the bottom electrode and the defective TaO x switching layer which enable controlled filament formation/rupture. The device area dependence of the low resistance state indicates multifilament formation. The device has shown a robust alternating current endurance of >10 5 cycles and a data retention of >10 4 s.

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Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure

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TaOx-based resistive switching memories: prospective and challenges

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Self-compliance RRAM characteristics using a novel W/TaOx/TiN structure

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Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/ W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance Ir Ox/Gd Ox/W cross-point memories

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Self-compliance-improved resistive switching using Ir/TaO x /W cross-point memory

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