Phase transform properties of Indium Selenide (In2Se3) based Random Access Memory (RAM) have been... more Phase transform properties of Indium Selenide (In2Se3) based Random Access Memory (RAM) have been explored in this paper. Phase change random access memory (PCRAM) is an attractive solid-state nonvolatile memory that possesses potential to meet various current technology demands of memory design. Already reported PCRAM models are mainly based upon Germanium-Antimony-Tellurium (Ge2Sb2Te5 or GST) materials as their prime constituents. However, PCRAM using GST material lacks some important memory attributes required for memory elements such as larger resistance margin between the highly resistive amorphous and highly conductive crystalline states in phase change materials. This paper investigates various electrical and compositional properties of the Indium Selenide (In2Se3) material and also draws comparison with its counterpart mainly focusing on phase transform properties. To achieve this goal, a SPICE model of In2Se3 based PCRAM model has been reported in this work. The reported mo...
Indian Journal of Science and Technology, Nov 24, 2016
Objectives: This paper carries out robustness study on p-channel and n-channel input differential... more Objectives: This paper carries out robustness study on p-channel and n-channel input differential amplifier (which is also known as single-stage operational transconductance amplifier). Methods and Analysis: The impact of Process, Voltage and Temperature (PVT) variations on the design metrics of both differential amplifiers is studied and suitable conclusions are drawn. Findings: The n-channel input differential amplifier is found to be more robust than p-channel input differential amplifier. Moreover, it provides higher gain, and 3-dB bandwidth as compared to its p-channel counterpart. All the results were obtained from extensive simulation using Virtuoso Analog Design Environment of Cadence @ 45-nm technology node. Application: Operational Transconductance Amplifier (OTA) can be used in the design of simple amplifiers with voltage-controllable gain and to the design of first-order and second-order active filters with controllable gains and controllable critical frequencies.
In this paper CMOS operational amplifier using a two stage has been enunciated for low power devi... more In this paper CMOS operational amplifier using a two stage has been enunciated for low power device application by using it in subthreshold region. The proposed Op amp shows high gain as well as moderate UGB using capacitor compensation technique circuit. It is operated on rail to rail power supply of ±500mV. This amplifier is highly useful for biomedical application due to low power consumption. The designed operational amplifier gain is 48dB, bandwidth is 29 KHz and phase margin is 61O, and slew rate is 50.6V/µS with 21 nW power consumption. This circuit is designed using Cadence analog & digital system design tools of UMC 90nm CMOS technology.
Phase transform properties of Indium Selenide (In2Se3) based Random Access Memory (RAM) have been... more Phase transform properties of Indium Selenide (In2Se3) based Random Access Memory (RAM) have been explored in this paper. Phase change random access memory (PCRAM) is an attractive solid-state nonvolatile memory that possesses potential to meet various current technology demands of memory design. Already reported PCRAM models are mainly based upon Germanium-Antimony-Tellurium (Ge2Sb2Te5 or GST) materials as their prime constituents. However, PCRAM using GST material lacks some important memory attributes required for memory elements such as larger resistance margin between the highly resistive amorphous and highly conductive crystalline states in phase change materials. This paper investigates various electrical and compositional properties of the Indium Selenide (In2Se3) material and also draws comparison with its counterpart mainly focusing on phase transform properties. To achieve this goal, a SPICE model of In2Se3 based PCRAM model has been reported in this work. The reported mo...
Indian Journal of Science and Technology, Nov 24, 2016
Objectives: This paper carries out robustness study on p-channel and n-channel input differential... more Objectives: This paper carries out robustness study on p-channel and n-channel input differential amplifier (which is also known as single-stage operational transconductance amplifier). Methods and Analysis: The impact of Process, Voltage and Temperature (PVT) variations on the design metrics of both differential amplifiers is studied and suitable conclusions are drawn. Findings: The n-channel input differential amplifier is found to be more robust than p-channel input differential amplifier. Moreover, it provides higher gain, and 3-dB bandwidth as compared to its p-channel counterpart. All the results were obtained from extensive simulation using Virtuoso Analog Design Environment of Cadence @ 45-nm technology node. Application: Operational Transconductance Amplifier (OTA) can be used in the design of simple amplifiers with voltage-controllable gain and to the design of first-order and second-order active filters with controllable gains and controllable critical frequencies.
In this paper CMOS operational amplifier using a two stage has been enunciated for low power devi... more In this paper CMOS operational amplifier using a two stage has been enunciated for low power device application by using it in subthreshold region. The proposed Op amp shows high gain as well as moderate UGB using capacitor compensation technique circuit. It is operated on rail to rail power supply of ±500mV. This amplifier is highly useful for biomedical application due to low power consumption. The designed operational amplifier gain is 48dB, bandwidth is 29 KHz and phase margin is 61O, and slew rate is 50.6V/µS with 21 nW power consumption. This circuit is designed using Cadence analog & digital system design tools of UMC 90nm CMOS technology.
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Papers by SWAPNIL SOURAV